Datasheets

UNR421300A View all Specifications

Product Photos

NS-B1

Catalog Drawings

NEW S Type SideNEW S Type Front

Standard Package 

5,000

Category

Discrete Semiconductor Products

Family

Transistors (BJT) - Single, Pre-Biased

Series

-

Packaging 

Tape & Box (TB) 

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1) (Ohms)

47k

Resistor - Emitter Base (R2) (Ohms)

47k

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

150MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

NS-B1

Supplier Device Package

NS-B1

Other Names

UN4213-(TA)UNR421300ATB